Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
نویسندگان
چکیده
V.Yu. Ivanov, M. Godlewski, S. Miasojedovas, S. Juršėnas, K. Kazlauskas, A. Žukauskas, C. Skierbiszewski, M. Siekacz, M. Leszczyński, P. Perlin, T. Suski and I. Grzegory Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Materials Science and Applied Research, Vilnius University Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania High Pressure Research Center, Polish Academy of Sciences P.O. Box 65, 01-142 Warsaw, Poland
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AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM OPTICALLY PUMPED InGaN/GaN MULTIPLE QUANTUM WELLS
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